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APT35GN120BG

Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT35GN120BG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 434
  • Description: Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 379W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 94A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 94A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 46 ns
Test Condition 800V, 35A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Continuous Collector Current 94A
Turn Off Time-Nom (toff) 465 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 220nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 24ns/300ns
Switching Energy 2.315mJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.31mm
Length 21.46mm
Width 16.26mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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