APT35GT120JU3
| Parameters | |
|---|---|
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 2.53nF @ 25V |
| VCEsat-Max | 2.1 V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2004 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 260W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 260W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 55A |
| Current - Collector Cutoff (Max) | 5mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 2.53nF |
| Turn On Time | 135 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 610 ns |
| IGBT Type | Trench Field Stop |
See Relate Datesheet
