Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
Series | POWER MOS 7® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | PURE MATTE TIN |
Additional Feature | LOW CONDUCTION LOSS |
Voltage - Rated DC | 600V |
Max Power Dissipation | 543W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Current Rating | 100A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 100A |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 49 ns |
Test Condition | 400V, 40A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
Turn Off Time-Nom (toff) | 158 ns |
IGBT Type | PT |
Gate Charge | 135nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 20ns/64ns |
Switching Energy | 385μJ (on), 352μJ (off) |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |