banner_page

APT40GR120B2D30

Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) T-MAX


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT40GR120B2D30
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 762
  • Description: Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) T-MAX (Kg)

Details

Tags

Parameters
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Test Condition 600V, 40A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Continuous Collector Current 88A
IGBT Type NPT
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 22ns/163ns
Switching Energy 1.38mJ (on), 906μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Element Configuration Single
Input Type Standard
Turn On Delay Time 22 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 163 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 88A
Collector Emitter Breakdown Voltage 1.2kV
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good