Parameters | |
---|---|
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.5V |
Test Condition | 600V, 40A, 4.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 40A |
Continuous Collector Current | 88A |
IGBT Type | NPT |
Gate Charge | 210nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 22ns/163ns |
Switching Energy | 1.38mJ (on), 906μJ (off) |
Gate-Emitter Thr Voltage-Max | 6V |
Height | 5.31mm |
Length | 21.46mm |
Width | 16.26mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 38.000013g |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2001 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 500W |
Element Configuration | Single |
Input Type | Standard |
Turn On Delay Time | 22 ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 163 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 88A |
Collector Emitter Breakdown Voltage | 1.2kV |