Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Manufacturer Package Identifier | TO-247 (B) |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 1997 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | SiCFET (Silicon Carbide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 273W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 273W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 100m Ω @ 20A, 20V |
Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 1000V |
Current - Continuous Drain (Id) @ 25°C | 41A Tc |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V |
Drain to Source Voltage (Vdss) | 1200V |
Drive Voltage (Max Rds On,Min Rds On) | 20V |
Vgs (Max) | +25V, -10V |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 41A |
Threshold Voltage | 1.7V |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 1.2kV |
Avalanche Energy Rating (Eas) | 2500 mJ |
Max Junction Temperature (Tj) | 175°C |
Height | 25.96mm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |