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APT40SM120B

MOSFET N-CH 1200V 41A TO247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT40SM120B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 291
  • Description: MOSFET N-CH 1200V 41A TO247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Manufacturer Package Identifier TO-247 (B)
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 273W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 273W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 41A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 41A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 2500 mJ
Max Junction Temperature (Tj) 175°C
Height 25.96mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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