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APT43GA90BD30

IGBT 900V 78A 337W TO247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT43GA90BD30
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 112
  • Description: IGBT 900V 78A 337W TO247 (Kg)

Details

Tags

Parameters
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 337W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 78A
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 28 ns
Test Condition 600V, 25A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Continuous Collector Current 78A
Turn Off Time-Nom (toff) 246 ns
IGBT Type PT
Gate Charge 116nC
Current - Collector Pulsed (Icm) 129A
Td (on/off) @ 25°C 12ns/82ns
Switching Energy 875μJ (on), 425μJ (off)
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet

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