Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | ISOTOP |
Number of Pins | 4 |
Weight | 30.000004g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 1999 |
Series | POWER MOS 7® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 329W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Current Rating | 75A |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 75A |
Current - Collector Cutoff (Max) | 500μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.3V |
Input Capacitance | 3.94nF |
Turn On Time | 47 ns |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
Continuous Collector Current | 75A |
Turn Off Time-Nom (toff) | 230 ns |
IGBT Type | PT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 3.94nF @ 25V |
Gate-Emitter Thr Voltage-Max | 6V |
Height | 9.6mm |
Length | 38.2mm |
Width | 25.4mm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |