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APT50GF120JRDQ3

IGBT MOD 1200V 120A 521W ISOTOP


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT50GF120JRDQ3
  • Package: ISOTOP
  • Datasheet: PDF
  • Stock: 443
  • Description: IGBT MOD 1200V 120A 521W ISOTOP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Voltage - Rated DC 1.2kV
Max Power Dissipation 521W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 75A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 521W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 120A
Current - Collector Cutoff (Max) 750μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Input Capacitance 5.32nF
Turn On Time 106 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Turn Off Time-Nom (toff) 520 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.32nF @ 25V
Height 9.6mm
Length 38.2mm
Width 25.4mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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