Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2001 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 781W |
Current Rating | 156A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 781W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 135A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 106 ns |
Test Condition | 800V, 50A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
Turn Off Time-Nom (toff) | 520 ns |
IGBT Type | NPT |
Gate Charge | 340nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 25ns/260ns |
Switching Energy | 3.6mJ (on), 2.64mJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |