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APT50GN120B2G

IGBT 1200V 134A 543W TO-247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT50GN120B2G
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 667
  • Description: IGBT 1200V 134A 543W TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 543W
Current Rating 134A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 134A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 55 ns
Test Condition 800V, 50A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 600 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 315nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 28ns/320ns
Switching Energy 4495μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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