Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 1999 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 366W |
Current Rating | 107A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 107A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.5V |
Turn On Time | 45 ns |
Test Condition | 400V, 50A, 4.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 50A |
Continuous Collector Current | 107A |
Turn Off Time-Nom (toff) | 400 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 325nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 20ns/230ns |
Switching Energy | 1185μJ (on), 1565μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 5.31mm |
Length | 21.46mm |
Width | 16.26mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |