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APT50GT60BRG

IGBT 600V 110A 446W TO247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT50GT60BRG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 251
  • Description: IGBT 600V 110A 446W TO247 (Kg)

Details

Tags

Parameters
Test Condition 400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Turn Off Time-Nom (toff) 365 ns
IGBT Type NPT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 14ns/240ns
Switching Energy 995μJ (on), 1070μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 600V
Max Power Dissipation 446W
Current Rating 110A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 46 ns
See Relate Datesheet

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