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APT54GA60BD30

IGBT 600V 96A 416W TO247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT54GA60BD30
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 615
  • Description: IGBT 600V 96A 416W TO247 (Kg)

Details

Tags

Parameters
Terminal Finish Pure Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 416W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 96A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 37 ns
Test Condition 400V, 32A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 32A
Turn Off Time-Nom (toff) 291 ns
IGBT Type PT
Gate Charge 28nC
Current - Collector Pulsed (Icm) 161A
Td (on/off) @ 25°C 17ns/112ns
Switching Energy 534μJ (on), 466μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet

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