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APT58M50J

MOSFET N-CH 500V 58A SOT-227


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT58M50J
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 119
  • Description: MOSFET N-CH 500V 58A SOT-227 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature FAST SWITCHING, AVALANCHE RATED, UL RECOGNIZED
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 58A
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 540W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 540W
Case Connection ISOLATED
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 340nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 270A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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