APT60GF120JRDQ3
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Configuration | Single |
| Power - Max | 625W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 149A |
| Current - Collector Cutoff (Max) | 350μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 7.08nF |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 30V |
| Input Capacitance (Cies) @ Vce | 7.08nF @ 25V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Number of Pins | 4 |
| Operating Temperature | -55°C~150°C TJ |
| Published | 1999 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 625W |
| Current Rating | 115A |
See Relate Datesheet
