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APT64GA90B2D30

Trans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT64GA90B2D30
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 381
  • Description: Trans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 500W
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 117A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Turn On Time 44 ns
Test Condition 600V, 38A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 38A
Turn Off Time-Nom (toff) 352 ns
IGBT Type PT
Gate Charge 162nC
Current - Collector Pulsed (Icm) 193A
Td (on/off) @ 25°C 18ns/131ns
Switching Energy 1192μJ (on), 1088μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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