Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 3 weeks ago) |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 1999 |
Series | POWER MOS 7® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 431W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Current Rating | 130A |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 130A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 7.4nF |
Turn On Time | 84 ns |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
Turn Off Time-Nom (toff) | 219 ns |
IGBT Type | PT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 7.4nF @ 25V |
Gate-Emitter Thr Voltage-Max | 6V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |