Parameters | |
---|---|
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | HIGH RELIABILITY |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 833W |
Current Rating | 200A |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 200A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 101 ns |
Test Condition | 800V, 75A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) | 925 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 425nC |
Current - Collector Pulsed (Icm) | 225A |
Td (on/off) @ 25°C | 60ns/620ns |
Switching Energy | 8045μJ (on), 7640μJ (off) |
Gate-Emitter Thr Voltage-Max | 6.5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |