Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | ISOTOP |
Number of Pins | 4 |
Weight | 30.000004g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 2006 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 416W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 416W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 100A |
Current - Collector Cutoff (Max) | 5mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.7V |
Input Capacitance | 5.34nF |
Turn On Time | 335 ns |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) | 610 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 5.34nF @ 25V |
VCEsat-Max | 2.1 V |
Height | 9.6mm |
Length | 38.2mm |
Width | 25.4mm |
RoHS Status | RoHS Compliant |