Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Resistance | 2.4Ohm |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 1.2kV |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Current Rating | 6.6A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 335W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 335W |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.9 Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2565pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 1200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 7A |
JEDEC-95 Code | TO-247AB |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 7A |
Pulsed Drain Current-Max (IDM) | 28A |
Avalanche Energy Rating (Eas) | 575 mJ |
Height | 5.31mm |
Length | 21.46mm |
Width | 16.26mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |