Parameters | |
---|---|
Current - Collector Pulsed (Icm) | 240A |
Td (on/off) @ 25°C | 23ns/158ns |
Switching Energy | 840μJ (on), 751μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6V |
Height | 21.46mm |
Length | 16.26mm |
Width | 5.31mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | PURE MATTE TIN |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 625W |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 143A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2V |
Turn On Time | 52 ns |
Test Condition | 400V, 47A, 4.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 47A |
Continuous Collector Current | 143A |
Turn Off Time-Nom (toff) | 326 ns |
IGBT Type | PT |
Gate Charge | 230nC |