Parameters | |
---|---|
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 625W |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 625W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 900V |
Max Collector Current | 145A |
Collector Emitter Breakdown Voltage | 900V |
Turn On Time | 49 ns |
Test Condition | 600V, 47A, 4.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 47A |
Turn Off Time-Nom (toff) | 320 ns |
IGBT Type | PT |
Gate Charge | 200nC |
Current - Collector Pulsed (Icm) | 239A |
Td (on/off) @ 25°C | 18ns/149ns |
Switching Energy | 1652μJ (on), 1389μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |