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APT80GA90B

Trans IGBT Chip N-CH 900V 145A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT80GA90B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 265
  • Description: Trans IGBT Chip N-CH 900V 145A 3-Pin(3+Tab) TO-247 (Kg)

Details

Tags

Parameters
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 625W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 145A
Collector Emitter Breakdown Voltage 900V
Turn On Time 49 ns
Test Condition 600V, 47A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Turn Off Time-Nom (toff) 320 ns
IGBT Type PT
Gate Charge 200nC
Current - Collector Pulsed (Icm) 239A
Td (on/off) @ 25°C 18ns/149ns
Switching Energy 1652μJ (on), 1389μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
See Relate Datesheet

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