APT80M60J
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | POWER MOS 8™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 80A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 960W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 135 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 24000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 84A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 600nC @ 10V |
| Rise Time | 155ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 125 ns |
| Turn-Off Delay Time | 410 ns |
| Continuous Drain Current (ID) | 84A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.06Ohm |
| Avalanche Energy Rating (Eas) | 3350 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
