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APTCV40H60CT1G

IGBT MODULE 600V 80A 176W SP1


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTCV40H60CT1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 219
  • Description: IGBT MODULE 600V 80A 176W SP1 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 2
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 176W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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