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APTCV60HM45RT3G

POWER MOD IGBT3 FULL BRIDGE SP3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTCV60HM45RT3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 587
  • Description: POWER MOD IGBT3 FULL BRIDGE SP3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Number of Elements 1
Configuration Full Bridge Inverter
Power - Max 250W
Input Single Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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