Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 210A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 9.3nF |
Turn On Time | 190 ns |
Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 150A |
Turn Off Time-Nom (toff) | 390 ns |
IGBT Type | NPT |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 9.3nF @ 25V |
VCEsat-Max | 3.7 V |
RoHS Status | RoHS Compliant |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Number of Pins | 18 |
Published | 2009 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 9 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -40°C |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 961W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 25 |
JESD-30 Code | R-XUFM-X9 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |