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APTGF200U120DG

IGBT MODULE 1200V 275A 1136W SP6


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGF200U120DG
  • Package: SP6
  • Datasheet: PDF
  • Stock: 867
  • Description: IGBT MODULE 1200V 275A 1136W SP6 (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 5
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.136kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 1136W
Transistor Application GENERAL PURPOSE SWITCHING
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 275A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 13.8nF
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn Off Time-Nom (toff) 400 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13.8nF @ 25V
VCEsat-Max 3.7 V
RoHS Status RoHS Compliant
See Relate Datesheet

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