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APTGF50DDA120T3G

IGBT MODULE 1200V 70A 312W SP3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGF50DDA120T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 321
  • Description: IGBT MODULE 1200V 70A 312W SP3 (Kg)

Details

Tags

Parameters
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.45nF
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn Off Time-Nom (toff) 400 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.45nF @ 25V
VCEsat-Max 3.7 V
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 16
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 312W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Number of Elements 2
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
See Relate Datesheet

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