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APTGFQ25H120T2G

IGBT MODULE 1200V 40A 227W SP2


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGFQ25H120T2G
  • Package: SP2
  • Datasheet: PDF
  • Stock: 218
  • Description: IGBT MODULE 1200V 40A 227W SP2 (Kg)

Details

Tags

Parameters
IGBT Type NPT and Fieldstop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.02nF @ 25V
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Screw, Through Hole
Mounting Type Through Hole
Package / Case SP2
Number of Pins 22
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 227W
Number of Elements 1
Configuration Full Bridge
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.02nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
See Relate Datesheet

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