Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 23 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 23 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 517W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 23 |
Qualification Status | Not Qualified |
Number of Elements | 6 |
Configuration | Triple, Dual - Common Source |
Case Connection | ISOLATED |
Power - Max | 517W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 140A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 6.2nF |
Turn On Time | 185 ns |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 100A |
Turn Off Time-Nom (toff) | 430 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 6.2nF @ 25V |
VCEsat-Max | 2.15 V |
RoHS Status | RoHS Compliant |