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APTGL475SK120D3G

IGBT MODULE 1200V 610A 2080W D3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGL475SK120D3G
  • Package: D-3 Module
  • Datasheet: PDF
  • Stock: 552
  • Description: IGBT MODULE 1200V 610A 2080W D3 (Kg)

Details

Tags

Parameters
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 2080W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 610A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 24.6nF
Turn On Time 270 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Turn Off Time-Nom (toff) 580 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 24.6nF @ 25V
VCEsat-Max 2.2 V
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 11
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.08kW
See Relate Datesheet

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