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APTGL475U120DAG

IGBT MODULE 1200V 610A 2307W SP6


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGL475U120DAG
  • Package: SP6
  • Datasheet: PDF
  • Stock: 202
  • Description: IGBT MODULE 1200V 610A 2307W SP6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 5
Operating Temperature -40°C~175°C TJ
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.307kW
Number of Elements 1
Configuration Single
Power - Max 2307W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 610A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 24.6nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 24.6nF @ 25V
VCEsat-Max 2.2 V
RoHS Status RoHS Compliant
See Relate Datesheet

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