Parameters | |
---|---|
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 37.2nF @ 25V |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Operating Temperature | -40°C~175°C TJ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 3kW |
Number of Elements | 1 |
Configuration | Single |
Power - Max | 3000W |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.2V |
Max Collector Current | 840A |
Current - Collector Cutoff (Max) | 5mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 37.2nF |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 600A |
IGBT Type | Trench Field Stop |
NTC Thermistor | No |