Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | SP3 |
Number of Pins | 3 |
Operating Temperature | -40°C~175°C TJ |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 650W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 2 |
Configuration | Half Bridge |
Turn On Delay Time | 30 ns |
Power - Max | 650W |
Input | Standard |
Turn-Off Delay Time | 290 ns |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 185A |
Current - Collector Cutoff (Max) | 50μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 6.15nF |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 100A |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 6.15nF @ 25V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |