APTGLQ100A65T1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | SP1 |
| Number of Pins | 1 |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 350W |
| Number of Elements | 1 |
| Configuration | Half Bridge |
| Turn On Delay Time | 19 ns |
| Power - Max | 350W |
| Input | Standard |
| Turn-Off Delay Time | 197 ns |
| Collector Emitter Voltage (VCEO) | 2.3V |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 100μA |
| Collector Emitter Breakdown Voltage | 650V |
| Input Capacitance | 6nF |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 100A |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 6nF @ 25V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
