Parameters | |
---|---|
Input Capacitance (Cies) @ Vce | 12.3nF @ 25V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Number of Pins | 6 |
Operating Temperature | -40°C~175°C TJ |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1kW |
Number of Elements | 1 |
Configuration | Full Bridge |
Turn On Delay Time | 30 ns |
Power - Max | 1000W |
Input | Standard |
Turn-Off Delay Time | 290 ns |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 350A |
Current - Collector Cutoff (Max) | 100μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 12.3nF |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 200A |
IGBT Type | Trench Field Stop |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |