Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SP4 |
Number of Pins | 20 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2006 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 12 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | AVALANCHE RATED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 560W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 12 |
JESD-30 Code | R-XUFM-X12 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Case Connection | ISOLATED |
Turn On Delay Time | 370 ns |
Power - Max | 560W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Turn-Off Delay Time | 650 ns |
Collector Emitter Voltage (VCEO) | 1.7kV |
Max Collector Current | 150A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Input Capacitance | 9nF |
Turn On Time | 450 ns |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 100A |
Turn Off Time-Nom (toff) | 1100 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Input Capacitance (Cies) @ Vce | 9nF @ 25V |
VCEsat-Max | 2.4 V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |