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APTGT100BB60T3G

IGBT MODULE 600V 150A 340W SP3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT100BB60T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 719
  • Description: IGBT MODULE 600V 150A 340W SP3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Screw, Through Hole
Mounting Type Through Hole
Package / Case SP3
Number of Pins 16
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 340W
Number of Elements 1
Configuration Half Bridge
Element Configuration Dual
Power - Max 340W
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 6.1nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.1nF @ 25V
VCEsat-Max 1.9 V
RoHS Status RoHS Compliant
See Relate Datesheet

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