Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 12 |
Operating Temperature | -40°C~150°C TJ |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 560W |
Number of Elements | 1 |
Configuration | Three Level Inverter |
Power - Max | 560W |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 150A |
Current - Collector Cutoff (Max) | 350μA |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Input Capacitance | 9nF |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 100A |
IGBT Type | Trench Field Stop |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 9nF @ 25V |
RoHS Status | RoHS Compliant |