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APTGT150A60T1G

IGBT MODULE 600V 225A 480W SP1


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT150A60T1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 922
  • Description: IGBT MODULE 600V 225A 480W SP1 (Kg)

Details

Tags

Parameters
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 480W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 225A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 9.2nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
VCEsat-Max 1.9 V
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
See Relate Datesheet

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