banner_page

APTGT150DH60TG

Trans IGBT Module N-CH 600V 225A 20-Pin Case SP-4


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT150DH60TG
  • Package: SP4
  • Datasheet: PDF
  • Stock: 719
  • Description: Trans IGBT Module N-CH 600V 225A 20-Pin Case SP-4 (Kg)

Details

Tags

Parameters
JESD-30 Code R-XUFM-X14
Qualification Status Not Qualified
Number of Elements 2
Configuration Asymmetrical Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 225A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 9.2nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 20
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 14
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good