APTGT200A60T3AG
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Number of Pins | 20 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 10 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 750W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 25 |
| JESD-30 Code | R-XUFM-X10 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Case Connection | ISOLATED |
| Power - Max | 750W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 290A |
| Current - Collector Cutoff (Max) | 250μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 12.3nF |
| Turn On Time | 180 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A |
| Turn Off Time-Nom (toff) | 370 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Input Capacitance (Cies) @ Vce | 12.3nF @ 25V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
