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APTGT200H60G

IGBT MOD TRENCH FULL BRIDGE SP6


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT200H60G
  • Package: SP6
  • Datasheet: PDF
  • Stock: 235
  • Description: IGBT MOD TRENCH FULL BRIDGE SP6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 625W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 290A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 12.3nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 12.3nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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