APTGT200TL60G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Number of Pins | 12 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 652W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 12 |
| Number of Elements | 4 |
| Configuration | Three Level Inverter |
| Case Connection | ISOLATED |
| Turn On Delay Time | 115 ns |
| Power - Max | 652W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Turn-Off Delay Time | 225 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 300A |
| Current - Collector Cutoff (Max) | 350μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 12.2nF |
| Turn On Time | 180 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A |
| Turn Off Time-Nom (toff) | 370 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 12.2nF @ 25V |
| VCEsat-Max | 1.9 V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
