banner_page

APTGT35DA120D1G

IGBT MODULE 1200V 55A 205W D1


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT35DA120D1G
  • Package: D1
  • Datasheet: PDF
  • Stock: 581
  • Description: IGBT MODULE 1200V 55A 205W D1 (Kg)

Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 205W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 205W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 55A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.5nF
Turn On Time 280 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good