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APTGT400DU120G

IGBT MODULE 1200V 560A 1785W SP6


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT400DU120G
  • Package: SP6
  • Datasheet: PDF
  • Stock: 457
  • Description: IGBT MODULE 1200V 560A 1785W SP6 (Kg)

Details

Tags

Parameters
Current - Collector Cutoff (Max) 750μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 28nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 400A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Factory Lead Time 1 Week
Input Capacitance (Cies) @ Vce 28nF @ 25V
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
RoHS Status RoHS Compliant
Package / Case SP6
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 1.785kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration Dual, Common Source
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1785W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 560A
See Relate Datesheet

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