Parameters | |
---|---|
Current - Collector Cutoff (Max) | 750μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 28nF |
Turn On Time | 340 ns |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 400A |
Turn Off Time-Nom (toff) | 610 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | No |
Factory Lead Time | 1 Week |
Input Capacitance (Cies) @ Vce | 28nF @ 25V |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
RoHS Status | RoHS Compliant |
Package / Case | SP6 |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | AVALANCHE RATED |
Max Power Dissipation | 1.785kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 7 |
Number of Elements | 2 |
Configuration | Dual, Common Source |
Element Configuration | Dual |
Case Connection | ISOLATED |
Power - Max | 1785W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 560A |