Parameters | |
---|---|
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Number of Pins | 16 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 277W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 25 |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 2 |
Configuration | Asymmetrical Bridge |
Element Configuration | Dual |
Case Connection | ISOLATED |
Power - Max | 277W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 75A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 3.6nF |
Turn On Time | 140 ns |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
Turn Off Time-Nom (toff) | 610 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 3.6nF @ 25V |
VCEsat-Max | 2.1 V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |