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APTGT50H120T3G

IGBT MOD TRENCH FULL BRIDGE SP3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT50H120T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 451
  • Description: IGBT MOD TRENCH FULL BRIDGE SP3 (Kg)

Details

Tags

Parameters
Case Connection ISOLATED
Power - Max 270W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 75A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.6nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.6nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 270W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 4
Configuration Full Bridge Inverter
See Relate Datesheet

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