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APTGT50H60RT3G

POWER MOD IGBT3 FULL BRIDGE SP3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT50H60RT3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 581
  • Description: POWER MOD IGBT3 FULL BRIDGE SP3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Number of Elements 1
Configuration Full Bridge Inverter
Input Single Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
VCEsat-Max 1.9 V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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