Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | D4 |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2012 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | AVALANCHE RATED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 2.9kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 2900W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 1.1kA |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 1100A |
Input Capacitance | 51nF |
Turn On Time | 430 ns |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 600A |
Turn Off Time-Nom (toff) | 1230 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 51nF @ 25V |
RoHS Status | RoHS Compliant |