banner_page

APTGT600U170D4G

IGBT MODULE 1700V 1100A 2900W D4


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT600U170D4G
  • Package: D4
  • Datasheet: PDF
  • Stock: 349
  • Description: IGBT MODULE 1700V 1100A 2900W D4 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.9kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 2900W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 1.1kA
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 1100A
Input Capacitance 51nF
Turn On Time 430 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 600A
Turn Off Time-Nom (toff) 1230 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 51nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good